On December 5th-7th, our group members Fei Hui, Yuanyuan Shi, Macro A. Villena and Mario Lanza participated in the 2016 IEDM, which was held in San Francisco (USA). In the conference, professor Mario Lanza gave a talk titled “2D h-BN based RRAM device”. It’s a wonderful experience to participate this flagship conference for electronic devices and meet the world experts in this field. We also had the opportunity to discuss with several friends in the field of RRAM devices.
Image: Fei Hui, Yuanyuan Shi, Macro A. Villena and Mario Lanza (from left to right)
On November 27th – December 2nd, our group member Fei Hui participated in the 2016 MRS Fall Meeting in Boston (USA). Materials Research Society (MRS) is leading world meeting for materials scientists. Fei Hui had the opportunity to discuss with world experts in the field of 2D materials based electronic devices.
Image: Fei Hui in 2016 MRS Fall Meeting in Boston, US
On November 8th -9th, our group member Xu Jing participated in Graphene Malaysia 2016 Conference, in Kuala Lumpur, Malaysia. Xu Jing presented an oral speech about Scalable MoS2 phototransistors with ultra-low power consumption and high light/dark current ratios. He had opportunities to interact, exchange ideas, build new connections with graphene key leaders from all over the world during the conference.
Image: Xu Jing in Graphene Malaysia 2016, Kuala Lumpur, Malaysia
In September, our group member Yuanyuan Shi joined the Stanford nanoelectronics group. This group is leaded by professor H.-S. Philip Wong in Stanford University, who was a senior manager at IBM before. The research of this nanoelectronics group is now focusing on the fabrication and characterization of nanoelectronic devices, chip-in-cell biosensors, brain inspired computing, novel memory and storage devices. And simultaneously, they also work on the the self-assembly for nanoelectronics and device modeling. Yuanyuan Shi will start a 2D materials based resistive random access memory (RRAM) program during her time in Stanford University.
Image: Yuanyuan Shi in Stanford campus
On September 29th Professor Mario Lanza was invited to give a seminar at the IWCM² Workshop, organized by Professors Daniele Ielmini and Luca Larcher in Milano (Italy). In this talk Professor Lanza presented his recent progress in the study of RRAM at the nanoscale using conductive AFM. Other renowed speakers in that meeting were Professor Wei Lu (Michigan University, USA), Thibaut Devolder (CNRS, France) and Hyunsang Hwang and (Postech, Korea).
Image: From left to right, Professors Wei Lu, Daniele Ielmini, Thibaut Devolder, Mario Lanza and Hyunsang Hwang
On October 9th-13th, our group members Yuanyuan Shi (visiting at Stanford Univerisity), Fei Hui (visiting at the Massachusetts Institute of Technology) and Mario Lanza participate in the 2016 IIRW conference in Stanford Sierra Conference Center (USA). In the conference, Professor Mario Lanza gave an invited talk titled “Reliability of electronic devices: nanoscale studies based on the conductive atomic force microscope”. That was a great opportunity to discuss with world experts in electronic devices reliability.
Image: Entrance of the Stanford Sierra Conference Center
The members of our group, Bingru Wang, Jing Xu and Mario Lanza participate in 2016 International Graphene Innovation Conference in Qingdao, China, on Sep. 22th-24th of 2016. Professor Mario presented an oral speech about Cost-effective fabrication of ultra durable graphene-coated nanoprobes for scanning probe microscopes. In this meeting, we had the opportunity to listen the talks and discuss with world leading scientists like Deji Akinwande (University of Texas at Austin, USA) and Jingxu got the opportunity to work in his group for one year.
Image: Group members Mario Lanza (Right), Jing xu (middle) Bingru Wang (left) participate in the GRAPCHINA 2016
Chengbin Pan is now doing his master in the pillar of Engineering Products Development of Singapore University of Technology and Design which is established with MIT. He is working with professor Pey Kin Leong (Associate provost) in the field of 2D dielectric characterization and its failure analysis for the application of h-BN based memory devices. The duration he works there starts at the first of July and ends at the 31st of December in 2016.
Image: Chengbin Pan in SUTD
Professor Mario Lanza has been ranked world top 2 young scientist in Microelectronic Engineering by Elsevier. For this compeititon Dr. Lanza was nominated by Dr. Guido Groeseneken (IMEC, Belgium). The committee specially valued his contributions in the field of nanoscale electronic characterization of ultra thin dielectrics.
Official announcement of the ranking at Elsevier website.
Online available at http://www.journals.elsevier.com/microelectronic-engineering/awards/award-finalists-and-winner-announcement
On April, Fei Hui has been to a research group leaded by Jing Kong in Massachusetts Institute of Technology (MIT). In this group, they work on designing new strategies to make graphene, MoS2, h-BN and other novel 2D materials with desired physical, chemical qualities. Fei hui will work on growing 2D materials and studying the application of these materials on electronic devices during her time in MIT. She will stay there for one entire year.
Image: Fei Hui in MIT campus