h-BN RRAM prototype reported in Advanced Functional Materials

Mario Lanza Posted on 10 February, 2017 Posted in News

The use of two dimensional (2D) materials to improve the capabilities of electronic devices is a promising strategy that has recently gained much interest in both academe and industry. In this paper, we develop resistive random access memories (RRAM) using 2D material. We use for the first time layered h-BN as resistive switching medium, and engineered a new family of devices with different perforances. This invention has been protected with an international patent, and the results have been published in Advanced Functional Materials, which has an impact factor of 11.38. This investigation has been developed in collaboration with the Massachusetts Institute of Technology, Stanford University and Harvard University. This breaking report represents an important milestone towards the implementation of advanced digital electronic devices using 2D materials.

Schematic, cross-sectional TEM image and typical behavior of the Ti/h-BN/Cu RRAM devices developed in our group.

Prospective students and post-docs:

We are looking for talented, productive and highly motivated students and postdoctoral researchers with interest in collaborative and high impact research. The selected candidates will work on the fabrication and characterization of nanostructured materials and devices with feasible applications in the industry. Applicants are expected to have a competitive publication record (at student/postdoc levels) in any branch of nanoscience, capacity for team work, and should have strong conceptual and practical background on the fabrication and characterization of nanostructured materials and devices using large equipments. Experience in Atomic Layer Deposition, e-beam evaporation, Electron Beam Lithography, Atomic Force Microscope, Scanning Electron Microscope, Transmission Electron Microscope, Auger Electron Spectroscopy, X-Ray Photoelectron Spectroscopy, Raman Spectroscopy, Scanning Tunneling Microscope, Probestation or Semiconductor Parameter Analyzer will be valued.

If you are interested in applying, please contact Prof. Lanza. Be very specific in your email and include a PDF attachment of your CV. Postdoc applicants should also include a list of references. Students are encouraged to explain why our laboratory would be a good fit. In all cases, students who are able to secure their own funding by national or international grants will be given top consideration.

If you meet the above criteria, please email Prof. Lanza to: [email protected]

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