Mario Lanza Professor Research Group

AES oxygen map of a graphene sheet exposed to accelerated corrosion tests. Cover of Nano Research
Grain bounaries in polycrystalline HfO2 are defect-rich locations that lead to phenomena like resistive switching
Lanzalab designs graphene-coated AFM tips with enhanced lifetime and reliability
Suzhou industrial park is a center for technology exchange between universities, startups and multinationals
Our university is located in a privileged area surrounded by lakes, parks and ancient towns

The Lanza Laboratory is located at Soochow University, the fastest growing university in the world according to Nature Index. The Lanzalab is lead by Prof. Mario Lanza and focus on the design, synthesis, characterization and modelling of next generation electronic devices, including resistive switching memories, field effect transistors and MEMS. We work in close collaboration with Massachusetts Institute of Technology, Stanford Universtiy, and University of Cambridge (among others). We are rising young, talented and productive scientists in the field of nanoelectronics. This year we have published several high impact papers and one of our patents got an investment of 1 million USD. Please don't hesitate to contact us if would like to know more information, we are always happy to discuss and collaborate in the field of nanoelectronics.

Lanza Research Group

Professor Mario Lanza receives the prestigious Young 1000 Talent Award

Fei Hui goes to Massachusetts Institute of Technology for research

h-BN RRAM prototype reported in Advanced Functional Materials

Fei Hui's graphene patent receives 1 million USD investment

Prof. Lanza joins the Editorial Board of Nature Scientific Reports

Prof. Lanza gives a talk at International Electron Devices Meeting

Our group hosts the 1st China RRAM International Workshop

Yuanyuan Shi goes to Stanford University for research

Professor Lanza is appointed as guest editor of a Wiley-VCH book