Patents with investment

1.    Fei Hui, Yuanyuan Shi, Mario Lanza*, “Cost-effective fabrication of ultra-durable atomic force microscope tips using graphene powder coatings”, International Patent, Ref. no. WO2016/074305, July 16th of 2016. In September 2016 this patent received 1 M$ investment from the Beijing Institute of Collaborative Innovation for creating an start-up and introducing this product in the market.

Books edited

1.    Mario Lanza, “Conductive Atomic Force Microscopy: Applications in Nanomaterials”, Publisher: Wiley-VCH, ISBN: 978-3-527-34091-0, August 2017. Includes 14 chapters, written by experts like Kin Leong Pey (SUTD), Oliver Krause (Nano World GmbH), G. Bensetter (DIT), and David Lewis (Nanonics), and Enzo di Fabrizio (KAUST), among others. This book represents the state-of-the-art in CAFM science.

Tutorials

1.    Mario Lanza*, “Studying the reliability of electronic devices via conductive atomic force microscopy”, IEEE International Reliability Physics Sympossium (IRPS), March 11th-15th 2018, Burlingame, USA. This was a two-hours talk in which I presented updated information about the use of CAFM in nanoelectronics.

2.    Mario Lanza*, “Reliability of electronic devices: nanoscale studies based on the conductive atomic force microscope”, 24th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), July 4th-7th 2017, Chengdu, China. This was a two-hours talk in which I presented updated information about the use of CAFM in nanoelectronics.

Journal papers

Front covers published by our group. From left to right: front cover of papers 5, 56, 52 and 44, front cover of the CAFM book edited by Professor Mario Lanza. If you need a cover design for highlighting your work, you may request it via Email to: mlanza@suda.edu.cn

67.    Lanlan Jiang, Yuanyuan Shi, Fei Hui, Kechao Tang, Qian Wu, Chengbin Pan, Xu Jing, Hasan Uppal, Felix Roberto Mario Palumbo, Guangyuan Lu, Tianru Wu, Haomin Wang, Marco A. Villena, Xiaoming Xie, Paul C McIntyre, and Mario Lanza*, “Dielectric Breakdown in Chemical Vapor Deposited Hexagonal Boron Nitride”, ACS Applied Materials & Interfaces, 9(45), 39758–3977, 2017.

66.    Tingting Han, Stefania Privitera*, Rachela Gabriella Milazzo, Corrado Bongiorno, Salvatore Di Franco, Francesco La Via, Xiaoxue Song, Yuanyuan Shi, Mario Lanza, Salvatore Lombardo, “Photo-electrochemical water splitting in silicon based photocathodes enhanced by plasmonic/catalytic nanostructures”, Materials Science and Engineering: B, 225,128-133, 2017.

65.    Xiaoxue Song, Fei Hui, Theresia Knobloch, Bingru Wang, Zhongchao Fan, Tibor Grasser, Xu Jing, Yuanyuan Shi, Mario Lanza*, “Piezoelectricity in two dimensions: Graphene vs. molybdenum disulfide”, Applied Physics Letters, 111, 083107, 2017.

64.    Kechao Tang, Andrew C. Meng, Fei Hui, Yuanyuan Shi, Trevor Petach, Charles Hitzman, Ai Leen Koh, David Goldhaber-Gordon, Mario Lanza, and Paul C. McIntyre*, “Distinguishing Oxygen Vacancy Electromigration and Conductive Filament Formation in TiO2 Resistance Switching Using Liquid Electrolyte Contacts”, Nano Letters, 17(7), 4390–4399, 2017.

63.    Na Xiao, Marco A. Villena, Bin Yuan, Shaochuan Chen, Bingru Wang, Marek Eliáš, Yuanyuan Shi, Fei Hui, Xu Jing, Andrew Scheuerman, Kechao Tang, Paul C. McIntyre and Mario Lanza*, “Resistive random access memory cells with a bilayer TiO2/SiOx insulating stack for simultaneous filamentary and distributed resistive switching”, Advanced Functional Materials, 1700384, 2017.

62.    Chengbin Pan, Enrique Miranda, Marco A Villena, Na Xiao, Xu Jing, Xiaoming Xie, Tianru Wu, Fei Hui, Yuanyuan Shi, and Mario Lanza*, “Model for multi-filamentary conduction in graphene/hexagonalboron-nitride/graphene based resistive switching devices”, 2D Materials, 4, 2, 2017.

61.    Xiaoxue Song, Fei Hui, Keith Gilmore, Bingru Wang, Guangyin Jing, Zhongchao Fan, Enric Grustan-Gutierrez, Yuanyuan Shi, Lucia Lombardi, Stephen A. Hodge, Andrea C. Ferrari and Mario Lanza*, “Enhanced piezoelectric effect at the edges of stepped molybdenum dissulfide nanosheets”, Nanoscale, 9, 6237–6245, 2017.

60.    Chengbin Pan, Yanfeng Ji, Na Xiao, Fei Hui, Kechao Tang, Yuzheng Guo, Xiaoming Xie, Francesco M. Puglisi, Luca Larcher, Enrique Miranda, Lanlan Jiang, Yuanyuan Shi, Ilia Valov, Paul C. McIntyre, Rainer Waser and Mario Lanza*, “Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride”, Advanced Functional Materials, 27, 1604811, 2017. Selected as frontispiece.

59.    Yuanyuan Shi, Tingting Han, Carolina Gimbert-Suriñach, Xiaoxue Song, Mario Lanza*, Antoni Llobet*, “Substitution of native silicon oxide by titanium in Ni-coated silicon photoanodes for water splitting solar cells”, Journal of Materials Chemistry A, 5, 1996–2003, 2017. Selected as front cover article.

58.    Lanlan Jiang, Na Xiao, Bingru Wang, Enric Grustan-Gutierrez, Xu Jing, Petr Babor, Miroslav Kolíbal, Guangyuan Lu, Tianru Wu, Haomin Wang, Fei Hui, Yuanyuan Shi, Bo Song, Xiaoming Xie, Mario Lanza*, “High resolution characterization of Hexagonal Boron Nitride Coatings exposed to aqueous and air oxidative environments”, Nano Research, 10(6): 2046–2055, 2017.

57.    Fei Hui, Pujashree Vajha, Yanfeng Ji, Chengbin Pan, Enric Grustan-Gutierrez, Huiling Duan, Peng He, Guqiao Ding, Yuanyuan Shi, Mario Lanza*, “Variability of graphene devices fabricated using graphene inks: atomic force microscope tips”, Surface & Coatings Technology, 320, 391–395, 2017.

56.    Xu Jing, Emanuel Panholzer, Xiaoxue Song, Enric Grustan-Gutierrez, Fei Hui, Yuanyuan Shi, Guenther Benstetter, Yury Illarionov, Tibor Grasser and Mario Lanza*, “Fabrication of scalable and ultra low power photodetectors with high light/dark current ratios using polycrystalline monolayer MoS2 sheets”, Nano Energy, 30, 494–502, 2016.

55.    Tingting Han,‡ Yuanyuan Shi,‡ Xiaoxue Song, Antonio Mio, Luca Valenti, Fei Hui, Stefania Privitera, Salvatore Lombardo and Mario Lanza*, “Ageing mechanisms of highly active and stable nickel-coated silicon photoanodes for water splitting”, Journal of Materials Chemistry A, 4, 8053–8060, 2016. ‡Equal contribution. Selected as back cover article.

54.    Chengbin Pan, Jianchen Hu, Enric Grustan-Gutierrez, Minh Tuan Hoang, Huiling Duan, Julien Yvonnet, Alexander Mitrushchenkov, Gilberte Chambaud, Mario Lanza*, “Suppression of nanowires clustering in hybrid energy harvesters”, Journal of Materials Chemistry C, 4, 3646–3653, 2016.

53.    Yanfeng Ji, Chengbin Pan, Meiyun Zhang, Shibing Long, Xiaojuan Lian, Feng Miao, Fei Hui, Yuanyuan Shi, Luca Larcher, Ernest Wu, Mario Lanza*, “Boron nitride as two dimensional dielectric: reliability and dielectric breakdown”, Applied Physics Letters, 108, 012905, 2016.

52.    Fei Hui, Pujashree Vajha, Yuanyuan Shi, Yanfeng Ji, Huiling Duan, Andrea Padovani, Luca Larcher, Xiao-Rong Li, Jing-Juan Xu, Mario Lanza*, “Moving graphene devices from lab to market: advanced graphene-coated nanoprobes”, Nanoscale, 8, 8466–8473, 2016. Selected as front cover article.

51.    Yuanyuan Shi, Carolina Gimbert-Suriñach, Tingting Han, Serena Berardi, Mario Lanza*, Antoni Llobet*, “CuO functionalized silicon photoanodes for efficient photoelectro-chemical water splitting devices”, ACS Applied Materials Interfaces, 8, 696–702, 2016.

50.    Yuanyuan Shi, Yanfeng Ji, Hui Sun, Fei Hui, Jianchen Hu, Yaxi Wu, Jianlong Fang Hao Lin, Jianxiang Wang, Huiling Duan*, Mario Lanza*, “Nanoscale characterization of PM2.5 airborne pollutants reveals high adhesiveness and aggregation capability of soot particles”, Nature Scientific Reports, 5, 11232, 2015.

49.    Yuanyuan Shi, Yanfeng Ji, Fei Hui, Montserrat Nafria, Marc Porti, Gennadi Bersuker, Mario Lanza*, “In situ demonstration of the link between mechanical strength and resistive switching in resistive random-access memories”, Advanced Electronic Materials, 1, 1400058, 2015.

48.    Yanfeng Ji, Fei Hui, Yuanyuan Shi, Tingting Han, Xiaoxue Song, Chengbin Pan and Mario Lanza*, “Fabrication of a fast-response and user-friendly environmental chamber for atomic force microscopes”, Review of Scientific Instruments, 86, 106105, 2015.

47.    Fei Hui, Yuanyuan Shi, Yanfeng Ji, Mario Lanza*, Huiling Duan*, “Mechanical properties of locally oxidized graphene electrodes”, Archive of Applied Mechanics, 85, 339–345, 2015.

46.    Jianchen Hu, Heng Li, Huiling Duan, Mario Lanza*, “Improvement of the electrical contact resistance at rough interfaces using two dimensional materials”, second revision, Journal of Applied Physics, 118, 215301, 2015.

45.    Yuanyuan Shi, Fei Hui, Yanfeng Ji, Hai-Hua Wu, Mario Lanza*, “Ageing mechanisms and reliability of graphene-based electrodes”, Nano Research, 7, 1820–1831, 2014.

44.    Mario Lanza, Marc Reguant, Guijin Zou, Pengyu Lv, Heng Li, Richard Chin, Haiyi Liang, Dapeng Yu, Huiling Duan*, “High performance piezoelectric nanogenerators using two dimensional flexible top electrodes”, Advanced Materials Interfaces, 1 , 1300101, 2014.

43.    K Zhang, M. Lanza, Z Shen*, Q Fu, S Hou, M Porti, M Nafría, “Analysis of Factors in the Nanoscale Physical and Electrical Characterization of High-K Materials by Conductive Atomic Force Microscope”, Integrated Ferroelectrics, 153, 1–8, 2014.

42.    A. Bayerl, Q. Wu, M. Porti, J. Martin-Martínez, M. Lanza, R. Rodriguez, V. Velayudhan, M. Nafria, X. Aymerich, M.B Gonzalez, E. Simoen, “A Conductive AFM nanoscale analysis of NBTI and Channel hot-carriers degradation in MOSFETs”, IEEE Transactions on Electron Devices, 61, 3118–3124, 2014.

41.    Michael J. Kenney, Ming Gong, Yanguang Li, Justin Z. Wu, Ju Feng, Mario Lanza and Hongjie Dai*, “High-Performance Silicon Photoanodes Passivated with Ultrathin Nickel Films for Water Oxidation”, Science, 342, 836–840, 2013 – Highlighted by Science in section Perspectives.

Research paper published in Science by Professor Mario Lanza. This work was highlighted by Science in the section called Perspectives.

Research paper published in Science in the field of MOS-based water splitting devices. This work was highlighted by Science in the section called Perspectives.

40.    Mario Lanza, Teng Gao, Zixuan Yin, Yanfeng Zhang, Zhongfan Liu, Yuzhen Tong, Ziyong Shen, Huiling Duan*, “Nanogap based graphene coated AFM tips with high spatial resolution, conductivity and durability”, Nanoscale, 5, 10816–10823, 2013.

39.    O. Pirrotta, L. Larcher*, M. Lanza, A. Padovani, M. Porti, M. Nafria, G. Bersuker, “Leakage current though the poly-crystalline HfO2: Trap densities at the grains and grain boundaries”, Journal of Applied Physics, 114, 134503, 2013.

38.    Mario Lanza, Yan Wang, Teng Gao, Albin Bayerl, Marc Porti, Montserrat Nafria, Yangbo Zhou, Guangying Jin, Zhongfan Liu, Yanfeng Zhang, Dapeng Yu, Huiling Duan*, “Electrical and mechanical performance of graphene sheets exposed to oxidative environments”, Nano Research, 6, 485–495, 2013 – Selected as cover article.

37.    A. Bayerl*, M. Lanza, L. Aguilera, M. Porti, M. Nafría, X. Aymerich, S. De Gendt, “Nanoscale and device level electrical behavior of ALD annealed Hf-based gate stacks grown with different precursors”, Microelectronics Reliability, 53, 6, 867–871, 2013.

36.    M. Lanza, Y. Wang, A. Bayerl, T. Gao, M. Porti, M. Nafria, H. Liang, G. Jing, Z. Liu, Y. Zhang, Y. Tong, H. Duan*, “Tuning graphene morphology by substrate towards wrinkle-free devices: experiment and simulation”, Journal of Applied Physics, 113, 104301, 2013 .

35.    M. Lanza, A. Bayerl, T. Gao, M. Porti, M. Nafria, G. Jing, Y. Zhang, Z. Liu, H. Duan*, “Graphene-coated Atomic Force Microscope tips for reliable nanoscale electrical characterization”, Advanced Materials, 25, 1440–1444, 2013.

34.    M. Lanza*, G. Bersuker, M. Porti, E. Miranda, M. Nafría, X. Aymerich, “Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries”, Applied Physics Letters, 101, 193502, 2012.

33.    M. Lanza*, K. Zhang, M. Porti, M. Nafria, Z. Y. Shen*, L. F. Liu*, J. F. Kang, D. Gilmer, and G. Bersuker, “Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures”, Applied Physics Letters, 100, 123508, 2012.

32.    A. Fontserè, A. Pérez-Tomás*, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J. C. Moreno, V. Iglesias, M. Porti, A. Bayerl, M. Lanza, and M. Nafría, “Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale”, Applied Physics Letters, 101, 093505, 2012.

31.    A. Fontserè*, A. Pérez-Tomás, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J. C. Moreno, M. R. Jennings, P. M. Gammon, C. A. Fisher, V. Iglesias, M. Porti, A. Bayerl, M. Lanza, and M. Nafría, “Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors”, Nanotechnology, 23, 395204, 2012.

30.    V. Iglesias*, M. Lanza, M. Porti, M. Nafría, X. Aymerich, L. F. Liu, J. F. Kang, G. Bersuker, K. Zhang, Z. Y. Shen, “Nanoscale observations of Resistive Switching High and Low conductivity states on TiN/HfO2/Pt structures”, Microelectronics Reliability, 52, 2110–2114, 2012.

29. A. Fontsere*, A. Perez-Tomas, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J. C. Moreno, P. M. Gammon, M. R. Jennings, M. Porti, A. Bayerl, M. Lanza and M. Nafria, “Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN”, Applied Physics Letters, 99, 213504, 2011.

28. V. Iglesias, M. Lanza*, K. Zhang, A. Bayerl, M. Porti, M. Nafría, X. Aymerich, G. Benstetter, Z. Y. Shen*, and G. Bersuker, “Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress”, Applied Physics Letters, 99, 103510, 2011.

27.    A. Bayerl, M. Lanza, M. Porti, M. Nafría, X. Aymerich, G. Benstetter, “Nanoscale and Device Level Gate Conduction Variability of High-k Dielectrics-Based Metal-Oxide-Semiconductor Structures”, IEEE Transactions On Device And Materials Reliability, 11, 495–501, 2011.

26.    A. Bayerl*, M. Lanza, M. Porti, F. Campabadal, M. Nafría, X. Aymerich, “Reliability and gate conduction variability of HfO2-based MOS devices: a combined nanoscale and device level study”, Microelectronic Engineering, 88, 1334–1337, 2011.

25.    K. McKenna*, A. Shluger, V. Iglesias, M. Porti, M. Nafría, M. Lanza, G. Bersuker, “Grain boundary mediated leakage current in polycrystalline HfO2 films”, Microelectronics Engineering, 88, 1272–1275, 2011.

24.    M. Lanza*, V. Iglesias, M. Porti, M. Nafría and X. Aymerich, “Polycrystallization effects on the variability of the electrical properties of high-k dielectrics at the nanoscale”, Nanoscale Research Letters, 6, 108, 2011.

23.    M. Lanza, M. Porti, M. Nafría, X. Aymerich, G. Benstetter, E. Lodermeier, H. Ranzinger G. Jaschke, S. Teichert, L. Wilde and P. Michalowski, “Conductivity and charge trapping after electrical stress in amorphous and polycristalline Al2O3 based devices studied with AFM related techniques”, IEEE Transactions on Nanotechnology, 10, 344–351, 2011.

22.    M. Nafría, R. Rodríguez, M. Porti, J. Martín-Martínez, M. Lanza and X. Aymerich, “Variability and Reliability in Ultra-Scaled MOS Devices: How Should They Be Evaluated from Nanoscale to Circuit Level?”, ECS Transactions, 28, 225–236, 2010.

21.    M. Lanza*, M. Porti, M. Nafría, X. Aymerich, E. Wittaker and B. Hamilton, “Electrical resolution during Conductive AFM measurements under different environmental conditions and contact forces”, Review of Scientific Instruments, 81, 106110, 2010.

20. M. Lanza*, M. Porti, M. Nafría, X. Aymerich, E. Whittaker and B. Hamilton, “UHV CAFM characterization of high-k dielectrics: effect of the technique resolution on the pre- and post-breakdown electrical measurements”, Microelectronics Reliability, 50, 1312–1315, 2010.

19.    M. Lanza, M. Porti, M. Nafría, X. Aymerich, A. Sebastiani, G. Ghidini, A. Vedda, and M. Fasoli, “Combined Nanoscale and Device-Level Degradation Analysis of SiO2 Layers of MOS Nonvolatile Memory Devices”, IEEE Transactions on device and materials reliability, 9, 529–536, 2009.

18.    M. Lanza*, M. Porti, M. Nafría, X. Aymerich, G. Ghidini and A. Sebastiani, “Trapped charge and Stress Induced Leakage Current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale”, Microelectronics Reliability, 49, 1188–1191, 2009.

17.    M. Lanza*, M. Porti, M. Nafría, X. Aymerich, G. Benstetter, E. Lodermeier, H. Ranzinger, G. Jaschke, S. Teichert, L.Wilde and P. Michalowski, “Crystallization and silicon diffusion nanoscale effects on the electrical properties Of Al2O3 based devices”, Microelectronic Engineering, 86, 1921–1924, 2009.

16.    L. Aguilera*, M. Lanza, A. Bayerl, M. Porti, M. Nafría, and X. Aymerich, “Development of a Conductive Atomic Force Microscope with a logarithmic current-to-voltage converter for the study of MOS gate dielectrics reliability”, Journal of Vacuum Science and Technology B, 27, 360–363, 2009.

15.    L. Aguilera*, M. Lanza, M. Porti, J. Grifoll, M. Nafría, and X. Aymerich, “Improving the electrical performance of a conductive atomic force microscope with a logarithmic current-to-voltage converter”, Review of Scientific instruments, 79, 073701, 2008.

14. M. Lanza*, M. Porti, M. Nafría, G. Benstetter, W. Frammelsberger, H. Ranzinger, E. Lodermeier and G. Jaschke, “Influence of the manufacturing process on the Electrical properties of thin (<4nm) Hafnium based high-k stacks observed with CAFM”, Microelectronics Reliability, 47, 1424–1428, 2007.

Journal papers by invitation

13.    Mario Lanza, “The correct methods to study memristors”, Advanced Electronic Material, 2017 (Accepted) Perspectives paper. Invited by Hakim Meskine (Wiley-VCH).

12.    Marco A Villena, Juan B Roldán, Francisco Jiménez-Molinos, Enrique Miranda, Jordi Suñé, Mario Lanza*, “SIM2RRAM: a physical model for RRAM devices simulation”, Journal of Computational Electronics, 2017. (Accepted)

11.    Mario Lanza*, Umberto Celano, Feng Miao, “Nanoscale characterization of resistive switching using advanced conductive atomic force microscopy based setups”, Journal of Electroceramics, 2017. (Accepted)

10.    Fei Hui, Shaochuan Chen, Xianhu Liang, Bin Yuan, Xu Jing, Yuanyuan Shi, Mario Lanza*, “Graphene Coated Nanoprobes: A Review”, Crystals, 7, 269, 2017.

9.    Enric Grustan-Gutierrez, Chuqi Wei, Bingru Wang, and Mario Lanza*, “Sputtering and amorphization of crystalline semiconductors by Nanodroplet Bombardment”, Crystal Research and Technology, 1600240, 2017.

8.    Fei Hui, Enric Grustan-Gutierrez, Shibing Long, Qi Liu, Anna. K. Ott, Andrea C. Ferrari, Mario Lanza*, “Graphene and Related Materials for Resistive Random Access Memories”, Advanced Electronic Materials, 1600195, 2017 – Invited Review. Selected as front cover article.

7.    Fei Hui, Chengbin Pan, Yanfeng Ji, Yuanyuan Shi, Mario Lanza*, “On the use of two dimensional hexagonal boron nitride as dielectric”, Microelectronic Engineering, 163, 119–133, 2016 – Invited Review.

6.    Fei Hui, Yuanyuan Shi, Yanfeng Ji, Mario Lanza*, Huiling Duan*, “Mechanical properties of locally oxidized graphene electrodes“, Archive of Applied Mechanics, 85, 339–345, 2015.

5.    Yanfeng Ji, Jianchen Hu, Mario Lanza*, “A future way of storing information: the resistive random access memory”, IEEE Nanotechnology Magazine, 9, 12–17, 2015 – Invited Communication.

4.    Jianchen Hu, Yanfeng Ji, Yuanyuan Shi, Fei Hui, Huiling Duan and Mario Lanza*, “A review on the use of graphene as a protective coating,”Annals of Materials Science and Engineering, 1, 1–16, 2014 – Invited Review.

3.    Mario Lanza*, “A Review on Resistive Switching in High-k Dielectrics: A Nanoscale point of View Using Conductive Atomic Force Microscope”, Materials, 7, 2155–2182, 2014 – Invited Review.

2.    Y. Shi, Y. Ji, F. Hui, V. Iglesias, M. Porti, M. Nafria, E. Miranda, G. Bersuker, M Lanza*, “Elucidating the Origin of Resistive Switching in Ultrathin Hafnium Oxides through High Spatial Resolution Tools”, ECS Transactions, 64, 19–28 (2014) – Invited paper.

1.    M. Lanza, Y. Wang, Hui Sun, Yuzhen Tong, H. L. Duan*, “Morphology and performance of graphene layers on as-grown and transferred substrates”, Acta Mechanica, 225, 1061–1073, 2014.

Patents

3.    Yanfeng Ji, Chengbin Pan, Fei Hui, Yuanyuan Shi, Na Xiao, Mario Lanza*, “Fabrication of a RRAM device using multilayer hexagonal boron nitride as dielectric”, International Patent PCT/CN2016/071783.

2.    M. Lanza, A. Bayerl, M. Porti, M. Nafria, H. Duan, “Graphene flexible electrodes for high efficiency piezoelectric nanogenerators”, International Patent, Ref. no. WO2015/004231 (A1), January 15th of 2015.

1.    M. Lanza, A. Bayerl, M. Porti, M. Nafria, H. Duan, “Conductive Atomic Force Microscope tips coated with Graphene”, International patent, Ref. no. WO2014/090938 (A1), June 19th of 2014.

Book chapters

7.    Guenther Benstetter, Alexander Hofer, Donping Liu, Werner Frammelsberger, Mario Lanza, “Fundamentals of CAFM Operation Modes”, Invited. Book chapter: Conductive Atomic Force Microscopy: Applications in Nanomaterials, Publisher: Wiley-VCH, ISBN: 978-3-527-34091-0, (2017).

6.    Vanessa Iglesias, Xu Jing, and Mario Lanza, “Combination of Semiconductor Parameter Analyzer and Conductive Atomic Force Microscope for Advanced Nanoelectronic Characterization”, Invited. Book chapter: Conductive Atomic Force Microscopy: Applications in Nanomaterials, Publisher: Wiley-VCH, ISBN: 978-3-527-34091-0 (2017).

5.    Chengbin Pan, Yuanyuan Shi, Fei Hui, Enric Grustan-Gutierrez and Mario Lanza, “Introduction, history and status of the CAFM”, Invited. Book chapter: Conductive Atomic Force Microscopy: Applications in Nanomaterials, Publisher: Wiley-VCH, ISBN: 978-3-527-34091-0 (2017).

4.    M. Nafría, R. Rodríguez, M. Porti, J. Martín-Martínez, M. Lanza and X. Aymerich, “Variability and Reliability in ultra-scaled MOS devices: How should they be evaluated from nanoscale to Circuit Level?” Invited. Book chapter: Dielectrics for Nanosystems IV: Materials Science, Processing, Reliability, and Manufacturing. ECS/Transactions, 28(2), pp. 225-236. ISBN: 978-1-56677-792-6. Editorial: The electrochemical society, Pennington, USA (2010).

3.    M. Nafría, R. Rodríguez, M. Porti, J. Martín-Martínez, M. Lanza and X. Aymerich,, “Variability and Reliability in Ultra-scaled MOS devices: Evaluation at the Nanoscale and impact on Device and Circuit functionality”, Invited. Book chapter: CMOS Technology pp. 81-104, ISBN: 978-1-61761-325-8. Editorial: Novascience, New York, USA (2011).

2.    M. Lanza, A. Bayerl, M. Reguant, P. Lv, C. Rubio, M. Porti, M. Nafria, H.L. Duan, “Reliable nanoscale electrical characterization using Graphene-coated Atomic Force Microscope tips”, Nanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computation (Volume 2), Chapter 6: NanoFab: Manufacturing & Instrumentation, pp. 466-469, ISBN: 978-1-4822-0584-8. Editorial: Nanoscience and Technology Institute, Washington, USA (2013).

1.    Albin Bayerl, M. Lanza, “Hafnium-based thin oxides: versatile insulators for microelectronics”, Invited. Book chapter: Transition Metals: Characteristics, Properties and Uses, ISBN: 978-1-61761-325-8. Editorial: Novascience Publishers, Inc. New York, USA (accepted 2014).

Conference papers with DOI

15.    E. Miranda, J. Suñe, C. Pan, M. Villena, N. Xiao, and M. Lanza*, Equivalent Circuit Model for the Electron Transport in 2D Resistive Switching Material Systems, 47th European Solid-State Device Research Conference, September 11th-14th, Leuven (Belgium), DOI: 10.1109/ESSDERC.2017.8066598.

14.    N. Xiao, M. A. Villena, X. Jing, F. Hui, Y. Y. Shi, M. Lanza*, TiO2/SiOX bilayer insulating stacks for filamentary/distributed resistive switching, 23rd IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits, July 4th-7th 2017, Chengdu (China).

13.    Francesco Puglisi*, Luca Larcher, Chengbin Pan, Fei Hui, Na Xiao, Yanfeng Ji, Mario Lanza*, “2D h-BN based RRAM”, IEEE International Electron Devices Meeting. 2016, Dec. 4th-7th 2016, San Francisco. DOI: 10.1109/IEDM.2016.7838544.

Image: Fei Hui, Yuanyuan Shi, Macro A. Villena and Mario Lanza (from left to right)

Our group presented a disruptive report on “Hexagonal Boron Nitride based Resistive Switching Mamories” at IEDM 2017. From left to right: Fei Hui, Yuanyuan Shi, Macro A. Villena and Mario Lanza.

12.    Yanfeng Ji, Chengbin Pan, Fei Hui, Yuanyuan Shi, Lanlan Jiang, Na Xiao, Luca Larcher, Mario Lanza*, “Nanoelectronic properties and failure mechanisms of two dimensional dielectrics based on hexagonal boron nitride”, 23rd IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), July 18th-21th 2016, Singapore. DOI: 10.1109/IPFA.2016.7564323.

11.    Yuanyuan Shi, Yanfeng Ji, Fei Hui, Montserrat Nafria, Marc Porti, Gennadi Bersuker and Mario Lanza*, 22nd  IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), “New insights on the origin of resistive switching in HfO2 thin films: the role of local mechanical strength”, June 29th- July 2nd 2015, Taiwan. DOI:10.1109/IPFA.2015.7224435, 472-475 pp.

10.    Q.Wu, M. Porti, A. Bayerl, M. Lanza*, J. Martin-Martínez, R. Rodriguez, M. Nafria, X. Aymerich, E. Simoen, Impact of NBTI and CHC stress on the nanoscale electrical properties of strained and non-strained MOSFETs, 10th IEEE Spanish Conference on Electron Devices, February 11th-13th 2015, Madrid, Spain. DOI: 10.1109/CDE.2015.7087505, 1-4 pp.

9.    Fei Hui, Marc Porti, Montserrat Nafria, Huiling Duan, Mario Lanza*, Fabrication of graphene MEMS by standard transfer: high performance atomic force microscope tips, 10th IEEE Spanish Conference on Electron Devices, February 11th-13th 2015, Madrid, Spain. DOI: 10.1109/CDE.2015.7087444, 1-4 pp.

8.    Yuanyuan Shi, Yanfeng Ji, Fei Hui, Mario Lanza*, On the ageing mechanisms of graphene electrodes, 10th IEEE Spanish Conference on Electron Devices, February 11th-13th 2015, Madrid, Spain. DOI: 10.1109/ CDE.2015.7087446, 1-4 pp.

7.    Xiaojuan Lian, Mario Lanza, Enrique Miranda, Jordi Suñe, On the properties of the conducting filament in ReRAM, IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, Invited talk, Oct 29th-31th, 2014, Guilin, China. DOI: 10.1109/ ICSICT.2014. 7021484, 1-4 pp.

6.    A. Bayerl, M. Porti, J. Martin-Martínez, M. Lanza, R. Rodriguez, V. Velayudhan, E. Amat, M. Nafria, X. Aymerich, Channel hot-carriers degradation in MOSFETs: A Conductive AFM study at the nanoscale, International Reliability Physics Symposium, April 14th-18th 2013, Monterrey, USA. DOI: 10.1109 /IRPS.2013.6532039, 5D.4.1–5D.4.6 pp.

5.    M. Lanza, Y. Wang, T. Gao, M. Porti, M. Nafria, H. Liang, G. Jing, Z. Liu, Y. Zhang, H. Duan, Nanoscale morphology of graphene on different substrates, Proceedings of the Spanish Conference on Electron Devices 2013, Feb 12th-14th, Valladolid, Spain. DOI:10.1109/ CDE.2013.6481394, 269-272 pp.

4.    A. Crespo-Yepes, M. Lanza, J. Martin-Martinez, V. Iglesias, R. Rodriguez, M. Porti, M. Nafria, and X. Aymerich, Nanoscale and device level analysis of the resistive switching phenomenon in ultra-thin high-k gate dielectrics, Proceedings of the Spanish Conference on Electron Devices 2013, Feb 12th-14th, Valladolid, Spain. DOI: 10.1109/CDE.2013.6481397, 281-284 pp.

3.    M. Nafría, R. Rodríguez, M. Porti, J. Martín-Martínez, M. Lanza and X. Aymerich, “Time-dependent variability of high-k based MOS devices: nanoscale characterization and inclusion in circuit simulators”, Invited Talk, IEEE International Electron Devices Meeting (IEDM), December 5 – 7, 2011, Washington DC, USA. DOI: 10.1109/IEDM.2011. 6131500, 6.3.1-6.3.4 pp.

2.    A. Bayerl, V. Iglesias, M. Lanza, M. Porti, M. Nafría and X. Aymerich, “High-k dielectric polycrystallization effects on the nanoscale electrical properties of MOS structures”, 8th Spanish Conference on Electron Devices, February 8-11th of 2011, Palma de Mallorca, Spain. DOI: 10.1109/SCED.2011.5744226, 1-4 pp.

1.    M. Lanza, L. Aguilera, M. Porti, M. Nafría and X. Aymerich, “Improving the electrical performance of a CAFM for gate oxide reliability measurements”, 7th Spanish Conference on Electron Devices, February 11th – 13th, 2009, Santiago, Spain. DOI: 10.1109/ SCED.2009. 4800474, 234 – 237 pp.

Theses completed

Chengbin Pan, Soochow University (China), M.S. Thesis, June 2017.
Xiaoxue Song, Soochow University (China), M.S. Thesis, June 2017.
Tingting Han, Soochow University (China), M.S. Thesis, June 2017.
Yanfeng Ji, Soochow University (China), M.S. Thesis, June 2016.
Yuanyuan Shi, Soochow University (China), M.S. Thesis, June 2016.
Yuanyuan Shi, Universitat Rovira i Virgili (Spain), M.S. Thesis, June 2015.
Emanuel Panholzer, Deggendorf Institute of Technology (Germany), M.S. Thesis, June 2016.
Marc Reguant, Universitat Autonoma de Barcelona (Spain), B.S. Thesis, July 2013.
Xavier Martinez, Universitat Autonoma de Barcelona (Spain), B.S. Thesis, July 2008.
Marcel Munte, Universitat Autonoma de Barcelona (Spain), B.S. Thesis, July 2007.
Mario Lanza, Ph.D. Thesis, December 2010.
CAFM Nanoscale electrical characterization of gate stacks for advanced MOS devices”,
Mario Lanza, M.S. Thesis, July 2007.
“Evaluation of the electrical performance of high-k dielectrics”, July 2007.
Mario Lanza, B.S. Thesis, July 2006.
“Electrical characterization of ultra-thin high-k dielectrics using Atomic Force Microscopy”

Theses ongoing

Fei Hui, Soochow University (China), Ph.D Thesis, expected by June 2018.
Yuanyuan Shi, Universitat Rovira i Virgili (Spain), Ph.D. Thesis, expected by June 2018.
Tingting Han, Soochow University (China), PhD Thesis, expected by June 2019.
Xu Jing, Soochow University (China), Ph.D. Thesis, expected by June 2020.
Shaochuan Chen, Soochow University (China), PhD Thesis, expected by June 2021.
Xianhu Liang, Soochow University (China), PhD Thesis, expected by June 2021
Na Xiao, Soochow University (China), M.S. Thesis, expected by June 2018.
Bingru Wang, Soochow University (China), M.S. Thesis, expected by June 2018.
Bin Yuan, Soochow University (China), M.S. Thesis, expected by June 2019.