Patents with investment

1.    Fei Hui, Yuanyuan Shi, Mario Lanza*, “Cost-effective fabrication of ultra-durable atomic force microscope tips using graphene powder coatings”, International Patent, Ref. no. WO2016/074305, July 16th of 2016. In September 2016 this patent received 1 M$ investment from the Beijing Institute of Collaborative Innovation for creating an start-up and introducing this product in the market.

Books edited

1.    Mario Lanza, “Conductive Atomic Force Microscopy: Applications in Nanomaterials”, Publisher: Wiley-VCH, ISBN: 978-3-527-34091-0, August 2017. Includes 14 chapters, written by experts like Kin Leong Pey (SUTD), Oliver Krause (Nano World GmbH), G. Bensetter (DIT), and David Lewis (Nanonics), and Enzo di Fabrizio (KAUST), among others. This book represents the state-of-the-art in CAFM science.

Journal papers

Front covers published by our group. From left to right: front cover of papers 5, 56, 52 and 44, front cover of the CAFM book edited by Professor Mario Lanza. If you need a cover design for highlighting your work, you may request it via Email to: mlanza@suda.edu.cn

59.    Kechao Tang, Andrew C. Meng, Fei Hui, Yuanyuan Shi, Trevor Petach, Charles Hitzman, Ai Leen Koh, David Goldhaber-Gordon, Mario Lanza, and Paul C. McIntyre*, Distinguishing Oxygen Vacancy Electromigration and Conductive Filament Formation in TiO2 Resistance Switching Using Liquid Electrolyte Contacts, Nano Letters17(7), 4390–4399, 2017.

58.    Na Xiao, Marco A. Villena, Bin Yuan, Shaochuan Chen, Bingru Wang, Marek Eliáš, Yuanyuan Shi, Fei Hui, Xu Jing, Andrew Scheuerman, Kechao Tang, Paul C. McIntyre and Mario Lanza*, “Resistive random access memory cells with a bilayer TiO2/SiOX insulating stack for simultaneous filamentary and distributed resistive switching”, Advanced Functional Materials, 1700384, 2017.

57.    Chengbin Pan, Enrique Miranda, Marco A Villena, Na Xiao, Xu Jing, Xiaoming Xie, Tianru Wu, Fei Hui, Yuanyuan Shi, and Mario Lanza*, “Model for multi-filamentary conduction in graphene/hexagonalboron-nitride/graphene based resistive switching devices”, 2D Materials, 4, 2, 2017.

56.    Xiaoxue Song, Fei Hui, Keith Gilmore, Bingru Wang, Guangyin Jing, Zhongchao Fan, Enric Grustan-Gutierrez, Yuanyuan Shi, Lucia Lombardi, Stephen A. Hodge, Andrea C. Ferrari and Mario Lanza*, “Enhanced piezoelectric effect at the edges of stepped molybdenum dissulfide nanosheets”, Nanoscale, 9, 6237–6245, 2017.

55.    Chengbin Pan, Yanfeng Ji, Na Xiao, Fei Hui, Kechao Tang, Yuzheng Guo, Xiaoming Xie, Francesco M. Puglisi, Luca Larcher, Enrique Miranda, Lanlan Jiang, Yuanyuan Shi, Ilia Valov, Paul C. McIntyre, Rainer Waser and Mario Lanza*, “Coexistence of Grain-Boundaries-Assisted Bipolar and Threshold Resistive Switching in Multilayer Hexagonal Boron Nitride”, Advanced Functional Materials, 27, 1604811, 2017. Selected as frontispiece.

54.    Fei Hui, Enric Grustan-Gutierrez, Shibing Long, Qi Liu, Anna. K. Ott, Andrea C. Ferrari, Mario Lanza*, “Graphene and Related Materials for Resistive Random Access Memories“, Advanced Electronic Materials, 1600195, 2017 – Invited Review. Selected as front cover article.

53.    Xu Jing, Emanuel Panholzer, Xiaoxue Song, Enric Grustan-Gutierrez, Fei Hui, Yuanyuan Shi, Guenther Benstetter, Yury Illarionov, Tibor Grasser and Mario Lanza*, “Fabrication of scalable and ultra low power photodetectors with high light/dark current ratios using polycrystalline monolayer MoS2 sheets”, Nano Energy, 30, 494–502, 2016.

52.    Yuanyuan Shi, Tingting Han, Carolina Gimbert-Suriñach, Xiaoxue Song, Mario Lanza*, Antoni Llobet*, “Substitution of native silicon oxide by titanium in Ni-coated silicon photoanodes for water splitting solar cells”, Journal of Materials Chemistry A, 5, 1996–2003, 2017. Selected as front cover article.

51.    Lanlan Jiang, Na Xiao, Bingru Wang, Enric Grustan-Gutierrez, Xu Jing, Petr Babor, Miroslav Kolíbal, Guangyuan Lu, Tianru Wu, Haomin Wang, Fei Hui, Yuanyuan Shi, Bo Song, Xiaoming Xie, Mario Lanza*, “High resolution characterization of Hexagonal Boron Nitride Coatings exposed to aqueous and air oxidative environments”, Nano Research, 10(6): 2046–2055, 2017.

50.    Fei Hui, Pujashree Vajha, Yanfeng Ji, Chengbin Pan, Enric Grustan-Gutierrez, Huiling Duan, Peng He, Guqiao Ding, Yuanyuan Shi, Mario Lanza*, “Variability of graphene devices fabricated using graphene inks: atomic force microscope tips”, Surface & Coatings Technology, 320, 391–395, 2017.

49.    Enric Grustan-Gutierrez, Chuqi Wei, Bingru Wang, and Mario Lanza*, “Sputtering and amorphization of crystalline semiconductors by Nanodroplet Bombardment”, Crystal Research and Technology, 1600240, 2017.

48.    Fei Hui, Chengbin Pan, Yanfeng Ji, Yuanyuan Shi, Mario Lanza*, “On the use of two dimensional hexagonal boron nitride as dielectric”, Microelectronic Engineering, 163, 119–133, 2016 – Invited Review.

47.    Tingting Han,‡ Yuanyuan Shi,‡ Xiaoxue Song, Antonio Mio, Luca Valenti, Fei Hui, Stefania Privitera, Salvatore Lombardo and Mario Lanza*, “Ageing mechanisms of highly active and stable nickel-coated silicon photoanodes for water splitting”, Journal of Materials Chemistry A, 4, 80538060, 2016. ‡Equal contribution. Selected as back cover article.

46.    Chengbin Pan, Jianchen Hu, Enric Grustan-Gutierrez, Minh Tuan Hoang, Huiling Duan, Julien Yvonnet, Alexander Mitrushchenkov, Gilberte Chambaud, Mario Lanza*, “Suppression of nanowires clustering in hybrid energy harvesters”, Journal of Materials Chemistry C, 4, 36463653, 2016.

45.    Yanfeng Ji, Chengbin Pan, Meiyun Zhang, Shibing Long, Xiaojuan Lian, Feng Miao, Fei Hui, Yuanyuan Shi, Luca Larcher, Ernest Wu, Mario Lanza*, “Boron nitride as two dimensional dielectric: reliability and dielectric breakdown”, Applied Physics Letters, 108, 012905, 2016.

44.    Fei Hui, Pujashree Vajha, Yuanyuan Shi, Yanfeng Ji, Huiling Duan, Andrea Padovani, Luca Larcher, Xiao-Rong Li, Jing-Juan Xu, Mario Lanza*, “Moving graphene devices from lab to market: advanced graphene-coated nanoprobes”, Nanoscale, 8, 84668473, 2016. Selected as front cover article.

43.    Yuanyuan Shi, Carolina Gimbert-Suriñach, Tingting Han, Serena Berardi, Mario Lanza*, Antoni Llobet*, “CuO functionalized silicon photoanodes for efficient photoelectro-chemical water splitting devices”, ACS Applied Materials Interfaces, 8, 696702, 2016.

42.    Yuanyuan Shi, Yanfeng Ji, Hui Sun, Fei Hui, Jianchen Hu, Yaxi Wu, Jianlong Fang Hao Lin, Jianxiang Wang, Huiling Duan*, Mario Lanza*, “Nanoscale characterization of PM2.5 airborne pollutants reveals high adhesiveness and aggregation capability of soot particles”, Nature Scientific Reports, 5, 11232, 2015.

41.    Yuanyuan Shi, Yanfeng Ji, Fei Hui, Montserrat Nafria, Marc Porti, Gennadi Bersuker, Mario Lanza*, “In situ demonstration of the link between mechanical strength and resistive switching in resistive random-access memories”, Advanced Electronic Materials, 1, 1400058, 2015.

40.    Yanfeng Ji, Jianchen Hu, Mario Lanza*, “A future way of storing information: the resistive random access memory”, IEEE Nanotechnology Magazine, 9, 1217, 2015 Invited Communication.

39.    Yanfeng Ji, Fei Hui, Yuanyuan Shi, Tingting Han, Xiaoxue Song, Chengbin Pan and Mario Lanza*, “Fabrication of a fast-response and user-friendly environmental chamber for atomic force microscopes”, Review of Scientific Instruments, 86, 106105, 2015.

38.    Fei Hui, Yuanyuan Shi, Yanfeng Ji, Mario Lanza*, Huiling Duan*, “Mechanical properties of locally oxidized graphene electrodes”, Archive of Applied Mechanics, 85, 339–345, 2015.

37.    Jianchen Hu, Heng Li, Huiling Duan, Mario Lanza*, “Improvement of the electrical contact resistance at rough interfaces using two dimensional materials”, second revision, Journal of Applied Physics, 118, 215301, 2015.

36.    Yuanyuan Shi, Fei Hui, Yanfeng Ji, Hai-Hua Wu, Mario Lanza*, “Ageing mechanisms and reliability of graphene-based electrodes”, Nano Research, 7, 18201831, 2014.

35.    Mario Lanza, Marc Reguant, Guijin Zou, Pengyu Lv, Heng Li, Richard Chin, Haiyi Liang, Dapeng Yu, Huiling Duan*, “High performance piezoelectric nanogenerators using two dimensional flexible top electrodes”, Advanced Materials Interfaces, 1 , 1300101, 2014.

34.    Mario Lanza*, “A Review on Resistive Switching in High-k Dielectrics: A Nanoscale point of View Using Conductive Atomic Force Microscope”, Materials7, 21552182, 2014 – Invited Review.

33.    Y. Shi, Y. Ji, F. Hui, V. Iglesias, M. Porti, M. Nafria, E. Miranda, G. Bersuker, M Lanza*, “Elucidating the Origin of Resistive Switching in Ultrathin Hafnium Oxides through High Spatial Resolution Tools”, ECS Transactions, 64, 1928 (2014)Invited paper.

32.    K Zhang, M. Lanza, Z Shen*, Q Fu, S Hou, M Porti, M Nafría, “Analysis of Factors in the Nanoscale Physical and Electrical Characterization of High-K Materials by Conductive Atomic Force Microscope”, Integrated Ferroelectrics, 153, 18, 2014.

31.    A. Bayerl, Q. Wu, M. Porti, J. Martin-Martínez, M. Lanza, R. Rodriguez, V. Velayudhan, M. Nafria, X. Aymerich, M.B Gonzalez, E. Simoen, “A Conductive AFM nanoscale analysis of NBTI and Channel hot-carriers degradation in MOSFETs”, IEEE Transactions on Electron Devices, 61, 31183124, 2014.

30.    M. Lanza, Y. Wang, Hui Sun, Yuzhen Tong, H. L. Duan*, “Morphology and performance of graphene layers on as-grown and transferred substrates”, Acta Mechanica, 225, 1061–1073, 2014.

29.    Jianchen Hu, Yanfeng Ji, Yuanyuan Shi, Fei Hui, Huiling Duan and Mario Lanza*, “A review on the use of graphene as a protective coating,”Annals of Materials Science and Engineering, 1, 116, 2014 – Invited Review.

28.    Michael J. Kenney, Ming Gong, Yanguang Li, Justin Z. Wu, Ju Feng, Mario Lanza and Hongjie Dai*, “High-Performance Silicon Photoanodes Passivated with Ultrathin Nickel Films for Water Oxidation”, Science, 342, 836840, 2013 – Highlighted by Science in section Perspectives.

Research paper published in Science by Professor Mario Lanza. This work was highlighted by Science in the section called Perspectives.

Research paper published in Science in the field of MOS-based water splitting devices. This work was highlighted by Science in the section called Perspectives.

27.    Mario Lanza, Teng Gao, Zixuan Yin, Yanfeng Zhang, Zhongfan Liu, Yuzhen Tong, Ziyong Shen, Huiling Duan*, “Nanogap based graphene coated AFM tips with high spatial resolution, conductivity and durability”, Nanoscale, 5, 1081610823, 2013.

26.    O. Pirrotta, L. Larcher*, M. Lanza, A. Padovani, M. Porti, M. Nafria, G. Bersuker, “Leakage current though the poly-crystalline HfO2: Trap densities at the grains and grain boundaries”, Journal of Applied Physics, 114, 134503, 2013.

25.    Mario Lanza, Yan Wang, Teng Gao, Albin Bayerl, Marc Porti, Montserrat Nafria, Yangbo Zhou, Guangying Jin, Zhongfan Liu, Yanfeng Zhang, Dapeng Yu, Huiling Duan*, “Electrical and mechanical performance of graphene sheets exposed to oxidative environments”, Nano Research, 6, 485495, 2013 – Selected as cover article.

24.    A. Bayerl*, M. Lanza, L. Aguilera, M. Porti, M. Nafría, X. Aymerich, S. De Gendt, “Nanoscale and device level electrical behavior of ALD annealed Hf-based gate stacks grown with different precursors”, Microelectronics Reliability53, 6, 867871, 2013.

23.    M. Lanza, Y. Wang, A. Bayerl, T. Gao, M. Porti, M. Nafria, H. Liang, G. Jing, Z. Liu, Y. Zhang, Y. Tong, H. Duan*, “Tuning graphene morphology by substrate towards wrinkle-free devices: experiment and simulation”, Journal of Applied Physics, 113, 104301, 2013 .

22.    M. Lanza, A. Bayerl, T. Gao, M. Porti, M. Nafria, G. Jing, Y. Zhang, Z. Liu, H. Duan*, “Graphene-coated Atomic Force Microscope tips for reliable nanoscale electrical characterization”, Advanced Materials, 25, 14401444, 2013.

21.    M. Lanza*, G. Bersuker, M. Porti, E. Miranda, M. Nafría, X. Aymerich, “Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries”, Applied Physics Letters, 101, 193502, 2012.

20.    M. Lanza*, K. Zhang, M. Porti, M. Nafria, Z. Y. Shen*, L. F. Liu*, J. F. Kang, D. Gilmer, and G. Bersuker, “Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures”, Applied Physics Letters, 100, 123508, 2012.

19.    A. Fontserè, A. Pérez-Tomás*, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J. C. Moreno, V. Iglesias, M. Porti, A. Bayerl, M. Lanza, and M. Nafría, “Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale”, Applied Physics Letters, 101, 093505, 2012.

18.    A. Fontserè*, A. Pérez-Tomás, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J. C. Moreno, M. R. Jennings, P. M. Gammon, C. A. Fisher, V. Iglesias, M. Porti, A. Bayerl, M. Lanza, and M. Nafría, “Nanoscale investigation of AlGaN/GaN-on-Si high electron mobility transistors”, Nanotechnology, 23, 395204, 2012.

17.    V. Iglesias*, M. Lanza, M. Porti, M. Nafría, X. Aymerich, L. F. Liu, J. F. Kang, G. Bersuker, K. Zhang, Z. Y. Shen, “Nanoscale observations of Resistive Switching High and Low conductivity states on TiN/HfO2/Pt structures”, Microelectronics Reliability, 52, 21102114, 2012.

16.    A. Fontsere*, A. Perez-Tomas, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J. C. Moreno, P. M. Gammon, M. R. Jennings, M. Porti, A. Bayerl, M. Lanza and M. Nafria, “Micro and nano analysis of 0.2 Ω mm Ti/Al/Ni/Au ohmic contact to AlGaN/GaN”, Applied Physics Letters, 99, 213504, 2011.

15.    V. Iglesias, M. Lanza*, K. Zhang, A. Bayerl, M. Porti, M. Nafría, X. Aymerich, G. Benstetter, Z. Y. Shen*, and G. Bersuker, “Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress”, Applied Physics Letters, 99, 103510, 2011.

14.    A. Bayerl, M. Lanza, M. Porti, M. Nafría, X. Aymerich, G. Benstetter, “Nanoscale and Device Level Gate Conduction Variability of High-k Dielectrics-Based Metal-Oxide-Semiconductor Structures”, IEEE Transactions On Device And Materials Reliability, 11, 495–501, 2011.

13.    A. Bayerl*, M. Lanza, M. Porti, F. Campabadal, M. Nafría, X. Aymerich, “Reliability and gate conduction variability of HfO2-based MOS devices: a combined nanoscale and device level study”, Microelectronic Engineering88, 1334–1337, 2011.

12.    K. McKenna*, A. Shluger, V. Iglesias, M. Porti, M. Nafría, M. Lanza, G. Bersuker, “Grain boundary mediated leakage current in polycrystalline HfO2 films”, Microelectronics Engineering, 88, 12721275, 2011.

11.    M. Lanza*, V. Iglesias, M. Porti, M. Nafría and X. Aymerich, “Polycrystallization effects on the variability of the electrical properties of high-k dielectrics at the nanoscale”, Nanoscale Research Letters, 6, 108, 2011.

10.    M. Lanza, M. Porti, M. Nafría, X. Aymerich, G. Benstetter, E. Lodermeier, H. Ranzinger G. Jaschke, S. Teichert, L. Wilde and P. Michalowski, “Conductivity and charge trapping after electrical stress in amorphous and polycristalline Al2O3 based devices studied with AFM related techniques”, IEEE Transactions on Nanotechnology, 10, 344351, 2011.

9.    M. Nafría, R. Rodríguez, M. Porti, J. Martín-Martínez, M. Lanza and X. Aymerich, “Variability and Reliability in Ultra-Scaled MOS Devices: How Should They Be Evaluated from Nanoscale to Circuit Level?”, ECS Transactions, 28, 225236, 2010.

8.    M. Lanza*, M. Porti, M. Nafría, X. Aymerich, E. Wittaker and B. Hamilton, “Electrical resolution during Conductive AFM measurements under different environmental conditions and contact forces”, Review of Scientific Instruments, 81, 106110, 2010.

7.    M. Lanza*, M. Porti, M. Nafría, X. Aymerich, E. Whittaker and B. Hamilton, “UHV CAFM characterization of high-k dielectrics: effect of the technique resolution on the pre- and post-breakdown electrical measurements”, Microelectronics Reliability, 50, 13121315, 2010.

6.    M. Lanza, M. Porti, M. Nafría, X. Aymerich, A. Sebastiani, G. Ghidini, A. Vedda, and M. Fasoli, “Combined Nanoscale and Device-Level Degradation Analysis of SiO2 Layers of MOS Nonvolatile Memory Devices”, IEEE Transactions on device and materials reliability, 9, 529536, 2009.

5.    M. Lanza*, M. Porti, M. Nafría, X. Aymerich, G. Ghidini and A. Sebastiani, “Trapped charge and Stress Induced Leakage Current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale”, Microelectronics Reliability, 49, 11881191, 2009.

4.    M. Lanza*, M. Porti, M. Nafría, X. Aymerich, G. Benstetter, E. Lodermeier, H. Ranzinger, G. Jaschke, S. Teichert, L. Wilde and P. Michalowski, “Crystallization and silicon diffusion nanoscale effects on the electrical properties Of Al2O3 based devices”, Microelectronic Engineering, 86, 19211924, 2009.

3.    L. Aguilera*, M. Lanza, A. Bayerl, M. Porti, M. Nafría, and X. Aymerich, “Development of a Conductive Atomic Force Microscope with a logarithmic current-to-voltage converter for the study of MOS gate dielectrics reliability”, Journal of Vacuum Science and Technology B, 27, 360363, 2009.

2.    L. Aguilera*, M. Lanza, M. Porti, J. Grifoll, M. Nafría, and X. Aymerich, “Improving the electrical performance of a conductive atomic force microscope with a logarithmic current-to-voltage converter”, Review of Scientific instruments, 79, 073701, 2008.

1.    M. Lanza*, M. Porti, M. Nafría, G. Benstetter, W. Frammelsberger, H. Ranzinger, E. Lodermeier and G. Jaschke, “Influence of the manufacturing process on the Electrical properties of thin (<4nm) Hafnium based high-k stacks observed with CAFM”, Microelectronics Reliability, 47, 14241428, 2007.

Patents

3.    Yanfeng Ji, Chengbin Pan, Fei Hui, Yuanyuan Shi, Na Xiao, Mario Lanza*, “Fabrication of a RRAM device using multilayer hexagonal boron nitride as dielectric”, International Patent PCT/CN2016/071783.

2.    M. Lanza, A. Bayerl, M. Porti, M. Nafria, H. Duan, “Graphene flexible electrodes for high efficiency piezoelectric nanogenerators”, International Patent, Ref. no. WO2015/004231 (A1), January 15th of 2015.

1.    M. Lanza, A. Bayerl, M. Porti, M. Nafria, H. Duan, “Conductive Atomic Force Microscope tips coated with Graphene”, International patent, Ref. no. WO2014/090938 (A1), June 19th of 2014.

Book chapters

4.    M. Nafría, R. Rodríguez, M. Porti, J. Martín-Martínez, M. Lanza and X. Aymerich, “Variability and Reliability in ultra-scaled MOS devices: How should they be evaluated from nanoscale to Circuit Level?” Invited. Book chapter: Dielectrics for Nanosystems IV: Materials Science, Processing, Reliability, and Manufacturing. ECS/Transactions, 28(2), pp. 225-236. ISBN: 978-1-56677-792-6. Editorial: The electrochemical society, Pennington, USA (2010).

3.    M. Nafría, R. Rodríguez, M. Porti, J. Martín-Martínez, M. Lanza and X. Aymerich,, “Variability and Reliability in Ultra-scaled MOS devices: Evaluation at the Nanoscale and impact on Device and Circuit functionality”, Invited. Book chapter: CMOS Technology pp. 81-104, ISBN: 978-1-61761-325-8. Editorial: Novascience, New York, USA (2011).

2.    M. Lanza, A. Bayerl, M. Reguant, P. Lv, C. Rubio, M. Porti, M. Nafria, H.L. Duan, “Reliable nanoscale electrical characterization using Graphene-coated Atomic Force Microscope tips”, Nanotechnology 2013: Electronics, Devices, Fabrication, MEMS, Fluidics and Computation (Volume 2), Chapter 6: NanoFab: Manufacturing & Instrumentation, pp. 466-469, ISBN: 978-1-4822-0584-8. Editorial: Nanoscience and Technology Institute, Washington, USA (2013).

1.    Albin Bayerl, M. Lanza, “Hafnium-based thin oxides: versatile insulators for microelectronics”, Invited. Book chapter: Transition Metals: Characteristics, Properties and Uses, ISBN: 978-1-61761-325-8. Editorial: Novascience Publishers, Inc. New York, USA (accepted 2014).

Conference tutorials

1.    Mario Lanza*, “Reliability of electronic devices: nanoscale studies based on the conductive atomic force microscope”, 24th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), July 4th-7th 2017, Chengdu, China.

Conference papers with DOI

13.    Francesco Puglisi*, Luca Larcher, Chengbin Pan, Fei Hui, Na Xiao, Yanfeng Ji, Mario Lanza*, “2D h-BN based RRAM”, IEEE International Electron Devices Meeting. 2016, Dec. 4th-7th 2016, San Francisco. DOI: 10.1109/IEDM.2016.7838544.

Image: Fei Hui, Yuanyuan Shi, Macro A. Villena and Mario Lanza (from left to right)

Our group presented a disruptive report on “Hexagonal Boron Nitride based Resistive Switching Mamories” at IEDM 2017. From left to right: Fei Hui, Yuanyuan Shi, Macro A. Villena and Mario Lanza.

12.    Yanfeng Ji, Chengbin Pan, Fei Hui, Yuanyuan Shi, Lanlan Jiang, Na Xiao, Luca Larcher, Mario Lanza*, “Nanoelectronic properties and failure mechanisms of two dimensional dielectrics based on hexagonal boron nitride”, 23rd IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), July 18th-21th 2016, Singapore. DOI: 10.1109/IPFA.2016.7564323.

11.    Yuanyuan Shi, Yanfeng Ji, Fei Hui, Montserrat Nafria, Marc Porti, Gennadi Bersuker and Mario Lanza*, 22nd  IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), “New insights on the origin of resistive switching in HfO2 thin films: the role of local mechanical strength”, June 29th- July 2nd 2015, Taiwan. DOI: 10.1109 /IPFA.2015.7224435, pp 472 – 475.

10.    Q.Wu, M. Porti, A. Bayerl, M. Lanza*, J. Martin-Martínez, R. Rodriguez, M. Nafria, X. Aymerich, E. Simoen, “Impact of NBTI and CHC stress on the nanoscale electrical properties of strained and non-strained MOSFETs”, 10th IEEE Spanish Conference on Electron Devices, February 11th-13th 2015, Madrid, Spain. DOI: 10.1109/CDE.2015.7087505, 1-4 pp.

9.    Fei Hui, Marc Porti, Montserrat Nafria, Huiling Duan, Mario Lanza, “Fabrication of graphene MEMS by standard transfer: high performance atomic force microscope tips”, 10th IEEE Spanish Conference on Electron Devices, February 11th-13th 2015, Madrid, Spain. DOI: 10.1109/CDE.2015.7087444, 1-4 pp.

8.    Yuanyuan Shi, Yanfeng Ji, Fei Hui, Mario Lanza, “On the ageing mechanisms of graphene-on-metal electrodes”, 10th IEEE Spanish Conference on Electron Devices, February 11th-13th 2015, Madrid, Spain. DOI: 10.1109/CDE.2015.7087446, 1-4 pp.

7.    Xiaojuan Lian, Mario Lanza, Enrique Miranda, Jordi Suñe, “On the properties of the conducting filament in ReRAM”, IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, Invited talk, Oct 29th-31th 2014, Guilin, China. DOI: 10.1109/ICSICT.2014. 7021484, 1-4 pp.

6.    A. Bayerl, M. Porti, J. Martin-Martínez, M. Lanza, R. Rodriguez, V. Velayudhan, E. Amat, M. Nafria, X. Aymerich, “Channel hot-carriers degradation in MOSFETs: A Conductive AFM study at the nanoscale”, International Reliability Physics Symposium, April 14th-18th 2013, Monterrey, USA. DOI: 10.1109 /IRPS.2013.6532039, 5D.4.1–5D.4.6 pp.

5.    M. Lanza, Y. Wang, T. Gao, M. Porti, M. Nafria, H. Liang, G. Jing, Z. Liu, Y. Zhang, H. Duan, “Nanoscale morphology of graphene on different substrates”, Proceedings of the Spanish Conference on Electron Devices 2013, Feb 12th-14th, Valladolid, Spain. DOI:10.1109/CDE.2013.6481394, 269-272 pp.

4.    A. Crespo-Yepes, M. Lanza, J. Martin-Martinez, V. Iglesias, R. Rodriguez, M. Porti, M. Nafria, and X. Aymerich, “Nanoscale and device level analysis of the resistive switching phenomenon in ultra-thin high-k gate dielectrics”, Proceedings of the Spanish Conference on Electron Devices 2013, pp. 281-284, Feb 12th-14th, Valladolid, Spain. DOI: 10.1109/CDE.2013.6481397 281-284 pp.

3.    M. Nafría, R. Rodríguez, M. Porti, J. Martín-Martínez, M. Lanza and X. Aymerich, “Time-dependent variability of high-k based MOS devices: nanoscale characterization and inclusion in circuit simulators”, Invited Talk, IEEE International Electron Devices Meeting (IEDM), pp. 6.3.1 – 6.3.4, December 5 – 7, 2011, Washington DC, USA. DOI: 10.1109/IEDM.2011. 6131500, 6.3.1-6.3.4 pp.

2.    A. Bayerl, V. Iglesias, M. Lanza, M. Porti, M. Nafría and X. Aymerich, “High-k dielectric polycrystallization effects on the nanoscale electrical properties of MOS structures”, 8th Spanish Conference on Electron Devices, February 8th-11th of 2011, Palma de Mallorca, Spain. DOI: 10.1109/SCED.2011.5744226, 1-4 pp.

1.    M. Lanza, L. Aguilera, M. Porti, M. Nafría and X. Aymerich, “Improving the electrical performance of a CAFM for gate oxide reliability measurements”, 7th Spanish Conference on Electron Devices, February 11th-13th, 2009, Santiago, Spain. DOI: 10.1109/SCED.2009. 4800474, 234-237 pp.

Additional contributions to conferences with peer reviewed process

36.    Mario Lanza*, “Hexagonal Boron Nitride as resistive switching media”, International Integrated Reliability Workshop, October 13th-16th of 2016, Stanford Sierra Conference Center Fallen Leaf Lake, USA. Invited talk (Invited by Professor Luca Larcher).

35.    Mario Lanza*, “Nanoscale electrical characterization of resistive switching using CAFM”. 7th International Workshop on Characterization and Modeling of Memory devices, September 29th-30th of 2016, Vimercate/Agrate Brianza, Italy. Invited talk (Invited by Professor Daniele Ielmini).

34.    Yuanyuan Shi, Tingting Han, Xiaoxue Song, Mario Lanza*, “Reliability and ageing mechanisms of ultrathin nickel coated silicon photoanodes for water splitting”, Thin Solid Films conference, July 12th-15th of 2016, Singapore.

33.    Fei Hui, Pujashree Vajha, Yuanyuan Shi, Yanfeng Ji, Huiling Duan, Mario Lanza*, “Moving graphene devices from lab to market: advanced graphene-coated nanoprobes”, Thin Solid Films conference, July 12th-15th of 2016, Singapore.

32.    Chengbin Pan, Jianchen Hu, Enric Grustan-Gutierrez, Mario Lanza*, “Suppression of nanowires clustering in hybrid energy harvesters”, Thin Solid Films conference, July 12th-15th of 2016, Singapore.

31.    Yuanyuan Shi, Tingting Han, Xiaoxue Song, Mario Lanza*, “Metal-Oxide-Semiconductor (MOS) structure based silicon photoanodes for photoelectrochemical water splitting devices”, Workshop on Dielectrics for Microelectronics“, Invited Talk June 27th-30th, Catania, Italy.

30.    Kechao Tang, Fei Hui, Trevor A Petach, David Goldhaber-Gordon, Mario Lanza, Paul C McIntyre*, “ReRAM Filament Formation and Characterization in ALD TiO2 by Ionic Liquid Gating”, MRS Spring meeting, March 28th to April 1st of 2016, Phoenix, USA.

29.    Yuanyuan Shi, Tingting Han, Carolina Gimbert-Suriñach, Xiaoxue Song, Serena Berardi, Antoni Llobet, Mario Lanza*, “Metal-Oxide-Semiconductor (MOS) structure based silicon photoanodes for photoelectrochemical water splitting devices”, 2nd Molecules and Materials for Artificial Photosynthesis Conference, Invited Talk, February 25th-28th, Cancun, Mexico.

28.    G. Chambaud, A. Mitrushchenkov, M.-T. Hoang, J. Yvonnet, C. Pan, M. Lanza, “Multi-scale model of piezoelectric sensors: from atoms to continuous media: from theoretical chemistry to mechanics”, International Conference on Nano Materials: Theory and Experiments (NanoTN 2016), Invited Talk, February 25th-27th, 2016 Marrakech, Morocco.

27.    Yanfeng Ji, Fei Hui, Tingting Han, Xiaoxue Song, Yuanyuan Shi, Mario Lanza*, “Reliability of Boron Nitride as thin dielectric”, MRS fall meeting, Nov. 29th – Dec. 4th 2015, Boston, USA.

26.    Mario Lanza, “Elucidating the Origin of Resistive Switching in Ultrathin Hafnium Oxides through High Spatial Resolution Tools”, Invited talk, The Electrochemical Society International meeting, October 5th-10th, 2014, Cancun, Mexico.

25.    M. Nafria, M. Porti, A. Bayerl, V. Iglesias, M. Lanza, J. Martin-Martinez, R. Rodriguez and X. Aymerich, “Nanoscale Electrical Characterization of Variability and Aging of CMOS Devices with Conductive AFM”, Invited talk, March 10th-14th, 2014, Phoenix, Arizona, USA.

24.    M. Lanza, Huiling Duan, “High efficiency nanowires-based piezoelectric nanogenerators using two dimensional flexible and conductive electrodes”, Invited talk, Thin Solid Films conference, July 15th-18th 2014, Chongqing, China.

23.    Michael J. Kenney, Ming Gong, Yanguang Li, Justin Z. Wu, Ju Feng, Mario Lanza and Hongjie Dai, “Nickel based metal-oxide-semiconductor photoanodes for highly active and stable water splitting solar cells”, 18th Workshop on Dielectrics in Microelectronics, 9th-11th June 2014, Kinsale, Ireland.

22.    M. Nafria, M. Porti, A. Bayerl, V. Iglesias, M. Lanza, J. Martin-Martinez, R. Rodriguez and X. Aymerich, “Conductive Atomic Force Microscospe as a Tool for the Characterization of Time-Dependent Variability of MOS Devices: Two Case Studies”, International Semiconductor Device Research Symposium, Invited talk, December 11th-13th, 2013, Maryland, USA.

21.    M. Lanza, H. L. Duan, Graphene-coated Atomic Force Microscope tips with reliable nanoscale electrical characterization, Invited talk, APCOM & ISCM, December 11th-14th, 2013, Singapore.

20.    M. Lanza, M. Reguant, G. Zou, P. Lv, H. Li, D. Yu, H. Liang, C. Rubio, H. Duan, “Low Electrical Resistance Graphene-Nanowires Junction For Piezoelectric Nanogenerators”, APCOM & ISCM, December 11th-14th, 2013, Singapore.

19.    M. Lanza, A. Bayerl, M. Reguant, P. Lv, C. Rubio, M. Porti, M. Nafria, H. L. Duan, “Reliable nanoscale electrical characterization using Graphene-coated Atomic Force Microscope tips”, TechConnect World 2013 (Nanotech), pp. 466-469, ISBN: 978-1-4822-0584-8, May 12-16 of 2013, Washington DC, USA.

18.    A. Bayerl, M. Lanza, T. Gao, M. Porti, M. Nafria, G. Y. Jing, Y. F. Zhang, Z. F. Liu, and H. L. Duan, “Improved Nanoscale Electrical Characterization with Graphene-Coated Atomic Force Microscope Tips”, Graphene 2013, 23rd-26th April 2013, Bilbao, Spain.

17.    Mario Lanza, Albin Bayerl, Vanessa Iglesias, Huiling Duan, Gennadi Bersuker, Marc Porti, Montserrat Nafria, Xavier Aymerich, “Nanoscale characterization of high-k insulators for future memory devices”, Invited talk, Nano S&T2012, 24th-26th October 2012, Qingdao, China.

16.    V. Iglesias, M. Lanza, M. Porti, M. Nafría, X. Aymerich, L. F. Liu,, J. F. Kang, G. Bersuker, K. Zhang, Z. Y. Shen, “Nanoscale observations of Resistive Switching High and Low conductivity states on TiN/HfO2/Pt structures”, European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, 3rd-5th October 2012, Cagliari, Italy.

15.    A. Fontserè, A. Pérez-Tomás, M. Placidi, J. Llobet, N. Baron, S. Chenot, Y. Cordier, J. C. Moreno, V. Iglesias, M. Porti, A. Bayerl, M. Lanza, and M. Nafría, “Conductive AFM AlGaN/GaN HEMTs characterization at the nanoscale”, 36th Workshop on Compound Semiconductor Devices and Integrated Circuits, 28th May – 1st June 2012, Island of Porquerolles, France.

14.    Mario Lanza, Yan Wang, Haiyi Liang, Huiling Duan, “Mechanism of wrinkle formation in chemical vapor deposited graphene and tuning its morphology by substrates”, 23rd International Congress of Theoretical and Applied Mechanics (ICTAM), 19th-24th August 2012, Beijing.

13.    Mario Lanza, Albin Bayerl, Vanessa Iglesias, Marc Porti, Javier Martín-Martínez, Rosana Rodríguez, Montserrat Nafría and Xavier Aymerich, “Nanoscale electrical properties and variability of amorphous and polycrystalline thin high-k gate stacks in MOS devices”, Invited talk, Thin Films Conference, 14th-17th July 2012, Singapore.

12.    A. Bayerl, M. Lanza, L. Aguilera, M. Porti, M. Nafría, X. Aymerich, S. De Gendt, “Nanoscale and device level electrical behavior of ALD annealed Hf-based gate stacks grown with different precursors”, Workshop on Dielectrics in Microelectronics, June 25th-27th, 2012, Dresden, Germany.

11.    Montserrat Nafria, Rosana Rodriguez, Marc Porti, Javier Martin Martinez, Mario Lanza and Xavier Aymerich, “Variability and reliability of advanced MOSFETs: nanoscale characterization and circuit simulation”, Workshop on Variability Modelling and Mitigation Techniques in Current and Future Technologies, March 16th-18th, 2012, Dresden, Germany.

10.    V. Iglesias, A. Bayerl, M. Lanza, M. Porti, M. Nafria, X. Aymerich, “Impact of the polycrystallization of high-k dielectrics on the nanoscale and device level electrical properties of MOS capacitors”, Nanospain Conference, April 11th-14th, 2011, Bilbao, Spain.

9.    A. Bayerl, M. Lanza, M. Porti, F. Campabadal, M. Nafría, X. Aymerich, “Reliability and gate conduction variability of HfO2-based MOS devices: a combined nanoscale and device level study”, 17th biannual conference of Insulating Films on Semiconductors, June 21st-24th June, 2011, Grenoble, France.

8.    M. Porti, M. Lanza, V. Iglesias, M. Nafría and X. Aymerich, “Polycrystallization effects on the variability of the electrical properties of high-k dielectrics at the nanoscale”, Invited talk, European Materials Research Society Fall Meeting 2010, September 13th-17th of 2010, at Warsaw, Poland.

7.    M. Lanza, M. Porti, M. Nafría, X. Aymerich, E. Whittaker and B. Hamilton, “UHV CAFM characterization of high-k dielectrics: effect of the technique resolution on the pre- and post-breakdown electrical measurements”, 21th European Symposium Reliability on Electron Devices, Failure Physics and Analysis, October 11th-15th, 2010, Gaeta – Italy.

6.    M. Nafría, R. Rodríguez, M. Porti, J. Martín-Martínez, M. Lanza and X. Aymerich, “Variability and Reliability in Ultra-Scaled MOS Devices: How Should They Be Evaluated from Nanoscale to Circuit Level?” Invited talk. 217th Electrochemical Society meeting, April 25th-30th , 2010, Vancouver, Canada.

5.    M. Lanza, M. Porti, M. Nafría, X. Aymerich, G. Ghidini and A. Sebastiani, “Trapped charge and Stress Induced Leakage Current (SILC) in tunnel SiO2 layers of de-processed MOS non-volatile memory devices observed at the nanoscale”, 20th European Symposium Reliability on Electron Devices, Failure Physics and Analysis, October 5th-9th, 2009, Arcachon, France.

4.    M. Lanza, M.Porti, M.Nafría, X. Aymerich, A. Sebastiani, G. Ghidini, “Conductive AFM analysis of the trapping properties of SiO2 tunnel layers for non-volatile memory devices”, Proceedings of the Trends in Nanotechnology conference, September 7th-11th of 2009, Barcelona, Spain.

3.    M. Lanza, M. Porti, M. Nafría, X. Aymerich, G. Benstetter, E. Lodermeier, H. Ranzinger, G. Jaschke, S. Teichert, L. Wilde and P. Michalowski, “Crystallization and silicon diffusion nanoscale effects on the electrical properties Of Al2O3 based devices”, 16th biannual conference of Insulating Films on Semiconductors, June 29th-July 1st, 2009, Clare College, Cambridge, UK.

2.    M. Lanza, L. Aguilera, M. Porti, J. Grifoll, M. Nafría and X. Aymerich, “Development of a Conductive Atomic Force Microscope with a logarithmic current-to-voltage converter for the study of MOS gate dielectrics reliability”, 15th Workshop on Dielectrics in Microelectronics, June 23th-25th, 2008, Bad Saarow (Berlin), Germany.

1.    M. Lanza, M. Porti, M. Nafría, G. Benstetter, W. Frammelsberger, H. Ranzinger, E. Lodermeier and G. Jaschke, “Influence of the manufacturing process on the electrical properties of thin (<4nm) Hafnium based high-k stacks observed with CAFM”, 18th European Symposium Reliability on Electron Devices, Failure Physics and Analysis, October 8th-12th, 2007, Arcachon, France. 

Theses completed

Yanfeng Ji, Soochow University (China), M.S. Thesis, June 2016.
Yuanyuan Shi, Soochow University (China), M.S. Thesis, June 2016.
Yuanyuan Shi, Universitat Rovira i Virgili (Spain), M.S. Thesis, June 2015.
Emanuel Panholzer, Deggendorf Institute of Technology (Germany), M.S. Thesis, June 2016.
Marc Reguant, Universitat Autonoma de Barcelona (Spain), B.S. Thesis, July 2013.
Xavier Martinez, Universitat Autonoma de Barcelona (Spain), B.S. Thesis, July 2008.
Marcel Munte, Universitat Autonoma de Barcelona (Spain), B.S. Thesis, July 2007.
Mario Lanza, Ph.D. Thesis, December 2010.
CAFM Nanoscale electrical characterization of gate stacks for advanced MOS devices
Mario Lanza, M.S. Thesis, July 2007.
“Evaluation of the electrical performance of high-k dielectrics”
Mario Lanza, B.S. Thesis, July 2006.
“Electrical characterization of ultra-thin high-k dielectrics using Atomic Force Microscopy” 

Graduation

Graduation of Yanfeng Ji and Yuanyuan Shi for the Master degree at Soochow University. Our first promotion (2013-2016).

 Theses ongoing 

Fei Hui, Soochow University (China), Ph.D Thesis, expected by June 2018.
Yuanyuan Shi, Universitat Rovira i Virgili (Spain), Ph.D. Thesis, expected by June 2018.
Tingting Han Soochow University (China), Ph.D. Thesis, expected by June 2019.
Xu Jing, Soochow University (China), Ph.D. Thesis, expected by June 2020.
Shaochuan Chen, Soochow University (China), Ph.D. Thesis, expected by June 2021.
Xianhu Liang, Soochow University (China), Ph.D. Thesis, expected by June 2021.
Chengbin Pan, Soochow University (China), M.S. Thesis, expected by June 2017.
Xiaoxue Song, Soochow University (China), M.S. Thesis, expected by June 2017.
Lanlan Jiang, Soochow University (China), M.S. Thesis, expected by June 2018.
Na Xiao, Soochow University (China), M.S. Thesis, expected by June 2018.
Bingru Wang, Soochow University (China), M.S. Thesis, expected by June 2018.
Bin Yuan, Soochow University (China), M.S. Thesis, expected by June 2019.