On December 5th-7th, our group members Fei Hui, Yuanyuan Shi, Macro A. Villena and Mario Lanza participated in the 2016 IEDM, which was held in San Francisco (USA). In the conference, professor Mario Lanza gave a talk titled “2D h-BN based RRAM device”. It’s a wonderful experience to participate this flagship conference for electronic devices and meet the world experts in this field. We also had the opportunity to discuss with several friends in the field of RRAM devices.
Prof. Lanza gives a talk at International Electron Devices Meeting
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