h-BN RRAM prototype reported in Advanced Functional Materials

The use of two dimensional (2D) materials to improve the capabilities of electronic devices is a promising strategy that has recently gained much interest in both academe and industry. In this paper, we develop resistive random access memories (RRAM) using 2D material. We use for the first time layered h-BN as resistive switching medium, and engineered a new family of devices with different perforances. This invention has been protected with an international patent, and the results have been published in Advanced Functional Materials, which has an impact factor of 11.38. This investigation has been developed in collaboration with the Massachusetts Institute of Technology, Stanford University and Harvard University. This breaking report represents an important milestone towards the implementation of advanced digital electronic devices using 2D materials.

Schematic, cross-sectional TEM image and typical behavior of the Ti/h-BN/Cu RRAM devices developed in our group.

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