Blog Archives

Our group participates in the IPFA 2017 conference

On July 4th – 7th, our group members Shaochuan Chen, Bin Yuan, Xianhu Liang and Mario Lanza participated in the 24th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) in Chengdu, China. In the conference,

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h-BN RRAM prototype reported in Advanced Functional Materials

The use of two dimensional (2D) materials to improve the capabilities of electronic devices is a promising strategy that has recently gained much interest in both academe and industry. In this paper, we develop resistive random access memories (RRAM) using

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Fei Hui’s graphene patent receives 1 million USD investment

Fei started to work in this project in September of 2013. She has developed a cost-effective and scalable approach to fabricate graphene-coated nanoprobes. Her work was published in Nanoscale and Surface & Coatings Technology, and protected with an international patent.

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Our group hosts the 1st China RRAM International Workshop

The China RRAM International Workshop launches its first edition with the objective of becoming the major forum in China for discussion on resistive random access memories and related applications. Invited speakers includ H.-S. Philip Wong (Stanford University, USA), Ming Liu

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Prof. Lanza joins the Editorial Board of Nature Scientific Reports

Professor Mario Lanza has been recently appointed as member of the Editorial Board of Scientific Reports, a multidisciplinary journal from Nature Publishing Group with an impact factor of 5.228.  Prof. Lanza has joined the “Electronics, Photonics and Device Physics Panel”,

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Prof. Lanza gives a talk at International Electron Devices Meeting

On December 5th-7th, our group members Fei Hui, Yuanyuan Shi, Macro A. Villena and Mario Lanza participated in the 2016 IEDM, which was held in San Francisco (USA). In the conference, professor Mario Lanza gave a talk titled “2D h-BN

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Fei Hui participates in the 2016 MRS Fall Meeting in Boston

On November 27th – December 2nd, our group member Fei Hui participated in the 2016 MRS Fall Meeting in Boston (USA). Materials Research Society (MRS) is leading world meeting for materials scientists. Fei Hui had the opportunity to discuss with

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Xu Jing participates in Graphene Malaysia 2016 in Kuala Lumpur

On November 8th -9th, our group member Xu Jing participated in Graphene Malaysia 2016 Conference, in Kuala Lumpur, Malaysia. Xu Jing presented an oral speech about Scalable MoS2 phototransistors with ultra-low power consumption and high light/dark current ratios. He had

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Yuanyuan Shi goes to Stanford University for research

In September, our group member Yuanyuan Shi joined the Stanford nanoelectronics group. This group is leaded by professor H.-S. Philip Wong in Stanford University, who was a senior manager at IBM before. The research of this nanoelectronics group is now

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Professor Mario Lanza gives an invited talk at IWCM² Workshop

On September 29th Professor Mario Lanza was invited to give a seminar at the IWCM² Workshop, organized by Professors Daniele Ielmini and Luca Larcher in Milano (Italy). In this talk Professor Lanza presented his recent progress in the study of

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